Interpretation of the piezoelectric photothermal spectra of p-type silicon samples

This paper presents both experimental and theoretical
amplitude and phase piezoelectric photothermal spectra (PPTS) of p-type silicon
samples. two dominant peaks at 1.07 eV and 1.18 eV were observed in PPT spectra
at room temperature. The relative intensities of these peaks change by a surface
treatment. Numerical analysis is performed by supposing that an inactive layer
exists at the sample surface. The characteristic structure observed in the
piezoelectric amplitude spectra of p-Si samples is well explained by the model
proposed for multilayer structure. We found that the proposed inactive layer
model is quite helpful in investigating the surface properties of a
semiconductor material.